vs-80apf1.pbf series, vs-80apf1.-m3 series www.vishay.com vishay semiconductors revision: 20-oct-11 1 document number: 93725 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast soft recovery rectifier diode, 80 a features ? 150 c max. operatin g junction temperature ? low forward voltage drop and short reverse recovery time ? designed and qualified according to jedec-jesd47 ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition (-m3 only) applications these devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted emi should be met. description the vs-80apf1... soft recove ry rectifier series has been optimized for combined short re verse recovery time and low forward voltage drop. the glass passivation ensures stable reliable operation in the most severe te mperature and power cycling conditions. product summary package to-247ac i f(av) 80 a v r 1000 v, 1200 v v f at i f 1.35 v i fsm 1100 a t rr 90 ns t j max. 150 c diode variation single die snap factor 0.5 2, 4 anode 1 anode 3 base common cathode to-247ac major ratings and characteristics symbol test conditions values units v rrm 1000/1200 v i f(av) sinusoidal waveform 80 a i fsm 1100 t rr 1 a, - 100 a/s 90 ns v f 40 a, t j = 25 c 1.2 v t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vs-80apf10pbf, vs-80apf10-m3 1000 1100 12 vs-80apf12pbf, vs-80apf12-m3 1200 1300
vs-80apf1.pbf series, vs-80apf1.-m3 series www.vishay.com vishay semiconductors revision: 20-oct-11 2 document number: 93725 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 92 c, 180 conduction half sine wave 80 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 1100 10 ms sine pulse, no voltage reapplied 1250 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 5000 a 2 s 10 ms sine pulse, no voltage reapplied 7000 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 70 000 a 2 ? s electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 80 a, t j = 25 c 1.35 v forward slope resistance r t t j = 150 c 4.03 m ? threshold voltage v f(to) 0.87 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 12 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 80 a pk 25 a/s 25 c 480 ns reverse recovery current i rr 7.1 a reverse recovery charge q rr 2.1 c snap factor s 0.5 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 0.35 c/w maximum thermal resistance, junction to ambient r thja 40 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-247ac 80apf10 80apf12 i fm t rr dir dt i rm(rec) q rr t
vs-80apf1.pbf series, vs-80apf1.-m3 series www.vishay.com vishay semiconductors revision: 20-oct-11 3 document number: 93725 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non- repetitive surge current fig. 6 - maximum non- repetitive surge current 0 30 maximum allowable case temperature (c) average forward current (a) 20 10 40 50 60 70 80 90 90 80 100 110 120 130 140 150 80epf.. series r thjc (dc) = 0.35 c/w conduction angle 60 30 90 180 120 ? 0 maximum allowable case temperature (c) average forward current (a) 20 40 60 80 100 120 140 90 80 100 110 120 130 140 150 dc 30 60 90 120 180 80epf.. series r thjc (dc) = 0.35 c/w ? conduction period maximum average forward power loss (w) average forward current (a) 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 175 200 rms limit dc 180 120 90 60 30 ? conduction period 80epf.. series t j = 150 c maximum average forward power loss (w) average forward current (a) 0 20 30 50 70 90 10 40 60 80 0 20 40 60 80 100 120 140 180 120 90 60 30 rms limit 80epf.. series t j = 150 c conduction angle ? 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 300 400 500 600 700 800 900 1000 1100 1200 initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s at any rated load condition and with rated v rrm applied following surge. 80epf.. series 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) 300 400 500 600 700 800 900 1000 1100 1200 1300 initial t j = 150 c no voltage reapplied rated v rrm reapplied maximum non-repetitive surge current versus pulse train duration. 80epf.. series
vs-80apf1.pbf series, vs-80apf1.-m3 series www.vishay.com vishay semiconductors revision: 20-oct-11 4 document number: 93725 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 1000 10 100 1 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 instantaneous forward current (a) instantaneous forward voltage (v) t j = 25 c t j = 150 c 80epf.. series 0 40 80 120 160 200 t rr - maximum reverse recovery time (ns) di/dt - rate of fall of forward current (a/s) 0 100 200 300 400 500 600 700 800 80epf.. series t j = 25 c i fm = 80 a i fm = 20 a i fm = 10 a i fm = 1 a i fm = 40 a 0 40 80 120 160 200 t rr - maximum reverse recovery time (ns) di/dt - rate of fall of forward current (a/s) 0 200 400 600 800 1000 1200 1400 1600 1800 80epf.. series t j = 150 c i fm = 80 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 1 a 0 40 80 120 160 200 q rr - maximum reverse recovery charge (nc) di/dt - rate of fall of forward current (a/s) 0 2000 4000 6000 8000 10 000 12 000 80epf.. series t j = 25 c i fm = 80 a i fm = 1 a i fm = 40 a i fm = 20 a i fm = 10 a 0 40 80 120 160 200 q rr - maximum reverse recovery charge (nc) di/dt - rate of fall of forward current (a/s) 0 5000 10 000 15 000 20 000 25 000 80epf.. series t j = 150 c i fm = 80 a i fm = 1 a i fm = 40 a i fm = 10 a i fm = 20 a
vs-80apf1.pbf series, vs-80apf1.-m3 series www.vishay.com vishay semiconductors revision: 20-oct-11 5 document number: 93725 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - recovery current characteristics, t j = 25 c fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 0 40 80 120 160 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 0 5 10 15 20 25 30 35 40 45 80epf.. series t j = 25 c i fm = 80 a i fm = 1 a i fm = 40 a i fm = 20 a i fm = 10 a 0 40 80 120 160 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 0 10 20 30 40 50 60 80epf.. series t j = 150 c i fm = 80 a i fm = 1 a i fm = 40 a i fm = 20 a i fm = 10 a 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 0.001 0.01 0.1 1 d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 steady state value (dc operation) 80epf.. series single pulse
vs-80apf1.pbf series, vs-80apf1.-m3 series www.vishay.com vishay semiconductors revision: 20-oct-11 6 document number: 93725 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-80apf10pbf 25 500 antist atic plastic tubes vs-80apf10-m3 25 500 antist atic plastic tubes vs-80apf12pbf 25 500 antist atic plastic tubes vs-80apf12-m3 25 500 antist atic plastic tubes links to related documents dimensions www.vishay.com/doc?95223 part marking information to-247ac pbf www.vishay.com/doc?95226 to-247ac -m3 www.vishay.com/doc?95007 10 = 1000 v 12 = 1200 v 2 - current rating (80 = 80 a) 1 - vishay semiconductors product 3 - circuit configuration: a = single diode, 3 pins 4 - package: p = to-247ac 5 - type of silicon: f = fast recovery 6 - voltage code x 100 = v rrm - environmental digit: 7 pbf = lead (pb)-free and rohs compliant -m3 = halogen-free, rohs compliant and terminations lead (pb)-free device code 5 1 3 2 4 6 7 80 vs- a p f 12 pbf
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